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Investigation on Degradation of SiC MOSFET Under Surge Current Stress of Body Diode
journal contribution
posted on 2020-04-03, 08:23 authored by Xi Jiang, Jun Wang, Jianjun Chen, Zongjian Li, Dongyuan Zhai, Xin Yang, Bing Ji, Z John ShenEliminating antiparallel silicon carbide Schottky barrier diode (SiC SBD) and making use of the intrinsic body diode of SiC metal-oxide-semiconductor-field-effect transistor (SiC MOSFET) offer a cost-effectiveness solution without obviously sacrificing the conversion efficiency in some power converter applications. Although the body diode of commercial SiC MOSFET has been qualified by several manufacturers, the reliability of SiC MOSFET under repetitive surge current stress of body diode has not been sufficiently studied. In this article, the new degradation phenomena of SiC MOSFET's gate oxide are observed, and the degradation mechanism is discussed when the intrinsic body diode of the 1200-V SiC planar gate MOSFETs was subjected to surge current stress. TCAD simulation and experimental measurements indicate that the generation and accumulation of electrons or holes within the gate oxide under surge current stress are the main reasons for the degradation of SiC MOSFET. Finally, a mitigation technique with optimal gate turn-off voltage is suggested to suppress the gate oxide degradation of the SiC MOSFET under surge current stress of its body diode.
History
Citation
IEEE Journal of Emerging and Selected Topics in Power Electronics ( Volume: 8 , Issue: 1 , March 2020 )Version
- VoR (Version of Record)
Published in
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICSVolume
8Issue
1Pagination
77 - 89 (13)Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCissn
2168-6777eissn
2168-6785Available date
2019-11-07Publisher DOI
Publisher version
https://ieeexplore.ieee.org/document/8894108Language
EnglishUsage metrics
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Keywords
Science & TechnologyTechnologyEngineering, Electrical & ElectronicEngineeringSilicon carbideMOSFETSurgesSchottky diodesLogic gatesDegradationStressBody diodegate oxide degradationsilicon carbide metal-oxide-semiconductor-field-effect transistor (SiC MOSFET)surge currentTHRESHOLD-VOLTAGE INSTABILITY4H-SIC MOSFETSTEMPERATUREBIAS
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