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An analytical model for the growth of quantum dots on ultrathin substrates

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journal contribution
posted on 27.03.2013, 14:46 by Simon P.A. Gill
The self-assembly of heteroepitaxial quantum dots on ultrathin substrates is analyzed within the context of small perturbation theory. Analytical expressions are derived for the dependence of the quantum dot separation on the substrate thickness. It is shown that the substrate thickness is critical in determining this separation when it is below the intrinsic material length scale of the system. The model is extended to simultaneous dot growth on both sides of the substrate. It is shown that vertically anticorrelated structures are preferred with an increase in the dot separation of 15% above that found in the one-sided case.

History

Citation

Applied Physics Letters, 2011, 98 (16), 1910 (3)

Author affiliation

/Organisation/COLLEGE OF SCIENCE AND ENGINEERING/Department of Engineering

Version

VoR (Version of Record)

Published in

Applied Physics Letters

Publisher

American Institute of Physics

issn

0003-6951

eissn

1077-3118

Copyright date

2011

Available date

27/03/2013

Publisher version

http://link.aip.org/link/?apl/98/161910

Language

en

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