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Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy

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journal contribution
posted on 08.04.2013, 14:33 by D.M. Bruls, J.W.A.M. Vugs, P.M. Koenraad, H.W.M. Salemink, J.H. Wolter, M. Hopkinson, M.S. Skolnick, Fei Long, Simon P.A. Gill
We present a cross-sectional scanning-tunneling microscopy investigation of the shape, size, and composition of InAs quantum dots in a GaAs matrix, grown by molecular beam epitaxy at low growth rate. From the dimensional analysis we conclude that the investigated quantum dots have an average height of 5 nm, a square base of 18 nm oriented along [010] and [100] and the shape of a truncated pyramid. From outward relaxation and lattice constant profiles we conclude that the dots consist of an InGaAs alloy and that the indium concentration increases linearly in the growth direction. Our results justify the predictions obtained from previous photocurrent measurements on similar structures and the used theoretical model.

History

Citation

Applied Physics Letters, 2002, 81 (9), pp. 1708-1710 (3)

Author affiliation

/Organisation/COLLEGE OF SCIENCE AND ENGINEERING/Department of Engineering

Version

VoR (Version of Record)

Published in

Applied Physics Letters

Publisher

American Institute of Physics (AIP)

issn

0003-6951

eissn

1077-3118

Copyright date

2002

Available date

08/04/2013

Publisher version

http://apl.aip.org/resource/1/applab/v81/i9/p1708_s1

Language

en