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In Situ Diagnosis of Wire Bonding Faults for Multichip IGBT Modules Based on the Crosstalk Effect

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journal contribution
posted on 13.10.2021, 09:04 by W Zhang, Kun Tan, Bing Ji, L Qi, X Cui, Jixuan Wei, X Zhang
Introducing bond wire diagnosis for multichip IGBT modules is key to the health monitoring of modular multilevel converters (MMCs), which allows for improved field robustness, reliability, and reduced maintenance cost. This paper leverages the crosstalk phenomenon during switching transitions to detect the chip open-circuit faults caused by the bond wire lift-off using typical half-bridge IGBT modules in a multichip-parallel configuration. The cycle-controlled, non-intrusive measurement is conducted under normal operation, when the device under test is at off-state and its complementary switch is during switching transitions. Two specialized health sensitive parameters arising from the dynamic gate loop waveforms are identified and evaluated, including 1) the gate voltage VGE(t3) when the declining collector voltage reaches zero, and 2) the negative peak gate voltage VGE(t4). The sensitivity and stability of these two parameters are compared through theoretical analysis, circuit simulation and practical verification. The results show that VGE(t4) is more suitable for online monitoring, while VGE(t3) is more sensitive than VGE(t4). With managed complexity in gate drives, this proposed health awareness approach is feasible in the submodules of MMC applications, but it can also be used in other power converter topologies incorporating the half-bridge structure.

Funding

Science and Technology Project of SGCC (Grant Number: 520201190095)

10.13039/501100001809-National Natural Science Foundation of China (Grant Number: 51977073)

History

Citation

IEEE Journal of Emerging and Selected Topics in Power Electronics, DOI: 10.1109/JESTPE.2021.3113369

Author affiliation

Department of Engineering

Version

AM (Accepted Manuscript)

Published in

IEEE Journal of Emerging and Selected Topics in Power Electronics

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

issn

2168-6777

eissn

2168-6785

Copyright date

2021

Available date

13/10/2021

Language

en