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Incorporation of Bi atoms in InP studied at the atomic scale by cross-sectional scanning tunneling microscopy

journal contribution
posted on 31.08.2017, 09:30 by C. M. Krammel, M. Roy, F. J. Tilley, P. A. Maksym, L. Y. Zhang, P. Wang, K. Wang, Y. Y. Li, M. Wang, P. M. Koenraad
We show the potential of cross-sectional scanning tunneling microscopy to address structural properties of dilute III-V bismides by investigating Bi:InP. Bismuth atoms down to the second monolayer below the {110} InP surfaces, which give rise to three classes of distinct contrast, are identified with the help of density functional theory calculations. Based on this classification, the pair-correlation function is used to quantify the ordering of Bi atoms on the long range. In a complementary short-ranged study, we investigate the Bi ordering at the atomic level. An enhanced tendency for the formation of first-nearest-neighbor Bi pairs is found. In addition, the formation of small Bi clusters is observed whose geometries appear to be related to strong first-nearest-neighbor Bi pairing. We also identify growth related crystal defects, such as In vacancies, P antisites, and Bi antisites.

Funding

C.M.K. and P.M.K. thank NanoNextNL, a micro and nanotechnology consortium of the Government of the Netherlands and 130 partners for financial support. F.J.T. thanks the University of Leicester for award of a research studentship. The DFT calculations were performed on the ALICE High Performance Computing Facility at the University of Leicester. L.Y.Z., K.W., Y.Y.L., and S.M.W. acknowledge the National Basic Research Program of China (Grant No. 2014CB643902) and the Key Program of Natural Science Foundation of China (Grant No. 61334004) for financial support.

History

Citation

Physical Review Materials, 2017, 1 (3) 034606

Author affiliation

/Organisation/COLLEGE OF SCIENCE AND ENGINEERING/Department of Physics and Astronomy

Version

VoR (Version of Record)

Published in

Physical Review Materials

Publisher

American Physical Society

eissn

2475-9953

Acceptance date

17/07/2017

Copyright date

2017

Available date

31/08/2017

Publisher version

https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.1.034606

Language

en

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