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Reading and writing charge on graphene devices

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journal contribution
posted on 27.03.2013, 14:11 by M.R. Connolly, E.D. Herbschleb, R.K. Puddy, Mervyn Roy, D. Anderson, G.A.C. Jones, P. Maksym, C.G. Smith
We use a combination of charge writing and scanning gate microscopy to map and modify the local charge neutrality point of graphene field-effect devices. We give a demonstration of the technique by writing remote charge in a thin dielectric layer over a graphene-metal interface and detecting a shift in the local charge neutrality point. We perform electrostatic simulations to characterize the interaction between a realistic scanning probe tip, the deposited charge, and the graphene and find a good semi-quantitative agreement with the experimental results.

History

Citation

Applied Physics Letters, 2012, 101 (2), 3505 (4)

Author affiliation

/Organisation/COLLEGE OF SCIENCE AND ENGINEERING/Department of Physics and Astronomy

Version

VoR (Version of Record)

Published in

Applied Physics Letters

Publisher

American Institute of Physics

issn

0003-6951

eissn

1077-3118

Copyright date

2012

Available date

27/03/2013

Publisher version

http://link.aip.org/link/?apl/101/023505

Language

en